Ultra‐Steep Slope Impact Ionization Transistors Based on Graphene/InAs Heterostructures
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چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Small Structures
سال: 2020
ISSN: 2688-4062,2688-4062
DOI: 10.1002/sstr.202000039